Publisher’s Note: Growth and characterization of <inline-formula><math display="inline" overflow="scroll"><mrow><msub><mrow><mi>In</mi></mrow><mrow><mi>x</mi></mrow></msub><msub><mrow><mi>Ga</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">N</mi></mrow></math></inline-formula> alloys by metalorganic chemical vapor deposition for solar cell applications
نویسندگان
چکیده
منابع مشابه
Growth and Characterization of Iii-v Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition By
ii ABSTRACT Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on s...
متن کاملMETALORGANIC CHEMICAL VAPOR DEPOSITION AND INVESTIGATION OF ALGAINN MICROSTRUCTURE by
......................................................................................................... x
متن کاملOptical properties of InxGa12xN alloys grown by metalorganic chemical vapor deposition
We present the results of optical studies of the properties of InxGa12xN epitaxial layers (0,x ,0.2) grown by metalorganic chemical vapor deposition. The effects of alloying on the fundamental band gap of InxGa12xN were investigated using a variety of spectroscopic techniques. The fundamental band-gap energies of the InxGa12xN alloys were determined using photomodulation spectroscopy measuremen...
متن کاملGe nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition
Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-t...
متن کاملCharacterization of highly-oriented ferroelectric PbxBa1−x TiO3 thin films grown by metalorganic chemical vapor deposition
PbxBa1−xTiO3 (0.2 x 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smal...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Photonics for Energy
سال: 2012
ISSN: 1947-7988
DOI: 10.1117/1.jpe.2.020101